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LN2312LT3G Dataheets PDF



Part Number LN2312LT3G
Manufacturers LRC
Logo LRC
Description 20V N-Channel MOSFET
Datasheet LN2312LT3G DatasheetLN2312LT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free ●FEATURES 1)VDS= 20V 2)RDS(ON), [email protected], [email protected] = 41m Ω 3)RDS(ON), [email protected], [email protected] = 47m Ω LN2312LT1G 3 1 2 SOT– 23 (TO–236AB) 3D ●DEVICE MARKING AND ORDERING INFORMATION Device LN2312LT1G LN2312LT3G Marking N12 N12 Shipping.

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LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free ●FEATURES 1)VDS= 20V 2)RDS(ON), [email protected], [email protected] = 41m Ω 3)RDS(ON), [email protected], [email protected] = 47m Ω LN2312LT1G 3 1 2 SOT– 23 (TO–236AB) 3D ●DEVICE MARKING AND ORDERING INFORMATION Device LN2312LT1G LN2312LT3G Marking N12 N12 Shipping 3000/Tape&Reel 10000/Tape&Reel G 1 S 2 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 3),[email protected] TA=25℃ TA=70℃ Pulsed Drain Current (Note1,2) Maximum Power Dissipation Operating and Storage Temperature Range Symbol Limits Unit VDSS 20 V VGS ±8 V 4.9 ID A 3.4 IDM 15 A PD 0.75 W TJ, Tstg –55 to +150 °C ●THERMAL DATA Parameter Symbol Thermal Resistance Junction-ambient(Note 3) Rthj-a 1. Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Surface mounted on 1 in2 copper PCB board Limits 140 Unit °C/W July , 2015 Rev .A 1/5 LESHAN RADIO COMPANY, LTD. LN2312LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) STATIC Parameter Drain−to−Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current Symbol V(BR)DSS VGS(TH) IDSS IGSS Drain−to−Source On Resistance RDS(on) Forward Diode Voltage Forward Transconductance VSD gFS Min. 20 0.4 – – – – – – – DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Gate Charge Gate−to−Drain Charge Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Ciss Coss Crss QG QGS QGD td(on) tr td(off) tf – – – – – – – – – – Typ. – 0.6 – – 31 24 21 – 40 Max. Unit Conditions – V VGS = 0 V, ID = 250 μA 1 V VGS = VDS, ID = 250 μA -1 μA VDS=20V, VGS=0V ±100 nA VDS = 0 V, VGS = ±8 V 57 VGS = 1.8 V, ID =4 A 47 m Ω VGS = 2.5 V, ID =4.5 A 41 VGS = 4.5 V, ID = 5 A 1.2 V VGS = 0 V, ISD = 1.7A – S VDS = 10 V, ID = 5 A 500 300 140 11.2 1.4 2.2 15 40 48 31 – – pF VGS = 0 V, f = 1.0 MHz, – VDS= 8 V – – nC VGS =4.5 V,VDS = 10 V – ID = 5 A 25 60 70 ns VDD = 10V, ΙD = 1Α, VGEN = 4.5V,RG = 6 Ω 45 July , 2015 Rev .A 2/5 LESHAN RADIO COMPANY, LTD. LN2312LT1G ELECTRICAL CHARACTERISTIC CURVES RDSon (ohm) Normalized RDSon ID (A) ID (A) 12 11 Ta=25 °C 10 9 8 7 6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS (V) VGS=1.8V VGS=4.5V VGS=2.5V VGS=5.0V VGS=3.5V FIG.1 Typical Output Characteristics 0.07 Ta=25 °C ID=3A 0.06 0.05 0.04 12 11 Ta=150 °C 10 9 8 7 6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS (V) VGS=1.8V VGS=4.5V VGS=2.5V VGS=5.0V VGS=3.5V FIG.2 Typical Output Characteristics 1.6 ID=4A 1.4 VGS=5V 1.2 1.0 0.8 0.03 012345678 VGS (V) 0.6 -50 -25 0 25 50 75 100 125 150 Tj (℃) FIG.3 On-Resistance vs. Gate Voltage FIG.4 Normalized On-Resistance vs. Junction Temperature July , 2015 Rev .A 3/5 LESHAN RADIO COMPANY, LTD. LN2312LT1G IS (A) ELECTRICAL CHARACTERISTIC CURVES 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) 25℃ 150℃ 1.2 Normalized VTH 1.4 ID=250μA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj (℃) FIG.5 Forward Characteristic of Reverse Diode FIG.6 Normalized Gate Threshold Voltage vs. Junction Temperature 1000 1 Normalized Rthja C (pF) 100 f=1MHz Ta=25 °C 10 0 2 4 6 8 10 12 14 16 18 20 VDS (V) Ciss Coss Crss FIG.7 Typical Capacitance Characteristics 0.1 Rthja: 246.6K/W 0.01 0.001 1.00E-06 1.00E-04 1.00E-02 1.00E+00 1.00E+02 Pulse Time (s) Normalized AVG 50% Normalized AVG 20% Normalized AVG 10% Normalized AVG 5% Normalized AVG 1% FIG.8 Normalized Effective Transient Thermal Impedance July , 2015 Rev .A 4/5 LESHAN RADIO COMPANY, LTD. LN2312LT1G A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 J L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 0.037 0.95 0.035 0.9 0.037 0.95 0.079 2.0 0.031 0.8 inches mm July , 2015 Rev .A 5/5 .


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