FDP5500_F085 N-Channel UltraFET Power MOSFET
FDP5500_F085
N-Channel UltraFET Power MOSFET 55V, 80A, 7mΩ
Features
Typ...
FDP5500_F085 N-Channel UltraFET Power MOSFET
FDP5500_F085
N-Channel UltraFET Power MOSFET 55V, 80A, 7mΩ
Features
Typ rDS(on) = 5.1mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 114nC at VGS = 10V Simulation Models
-Temperature Compensated PSPICE and SABERTM Models
Peak Current vs Pulse Width Curve
UIS Rating Curve
Qualified to AEC Q101
RoHS Compliant
Applications
DC Linear Mode Control Solenoid and Motor Control Switching
Regulators Automotive Systems
April 2009
Package
DRAIN (FLANGE)
TO-220AB
SOURCE
DRAIN GATE
©2009 Fairchild Semiconductor Corporation FDP5500_F085 Rev. A
1
Symbol
D
G S
www.fairchildsemi.com
FDP5500_F085 N-Channel UltraFET Power MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VDGR VGS
ID
Drain to Source Voltage
Drain to Gate Voltage (RGS = 20kΩ) Gate to Source Voltage Drain Current Continuous (TC < 135oC, VGS = 10V) Pulsed
EAS
PD
TJ, TSTG TL Tpkg
Single Pulse Avalanche Energy Power Dissipation Derate above 25oC Operating and Storage Temperature Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec) Max. Package Temp. for Soldering (Package Body for 10sec)
Thermal Characteristics
(Note 1) (Note 1)
(Note 2)
RθJC RθJA
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-220AB, 1in2 copper pad area
Ratings 55 55 ±20 80
See Figure 4 860 375 2.5
-55 to + 175 300 260
0.4 62
Units V V V A mJ W
W/oC
oC
oC/W oC/W
Package Marking and Ordering Information
Device M...