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FDB035N10A

N-Channel PowerTrench MOSFET

Description

FDB035N10A — N-Channel PowerTrench® MOSFET FDB035N10A N-Channel PowerTrench® MOSFET 100 V, 214 A, 3.5 mΩ November 2013 Features RDS(on) = 3.0 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge, QG = 89 nC ( Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Co...

Fairchild Semiconductor

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