Small Signal MOSFET
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–23
• We declare that the material of p...
Description
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–23
We declare that the material of product
compliance with RoHS requirements.
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.)
Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VDSS
VDGR
ID ID IDM
Value 60
60
±115 ±75 ±800
Unit Vdc Vdc mAdc
VGS VGSM
±20 Vdc ±40 Vpk
Symbol PD
Max
225 1.8
Unit
mW mW/°C
RθJA PD
RθJA TJ, Tstg
556 300
2.4 417 –ā55 to +150
°C/W mW mW/°C
°C/W °C
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
Marking
Shipping
L2N7002SLT1G L2N7002SLT3G
703 3000 Tape & Reel 703 10000 Tape & Reel
L2N7002SLT1G
3
1 2 SOT– 23 (TO–236AB)
115 mAMPS 60 VOLTS
R DS(on) = 7.5 W
N - Channel 3
1
2
MARKING DIAGRAM & PIN ASSIGNMENT
Drain 3
703 W 12 Gate Source 703 = Device Code W = Work Week
1/4
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