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K3669
2SK3669
Description
2SK3669 TOSHIBA Field Effect
Transistor
Silicon N-Channel MOS Type (π-MOS VII) 2SK3669 Switching
Regulator
, Audio Amplifier and Motor Drive Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) www.DataSheet4U.cEonmhan...
Toshiba Semiconductor
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