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MBR30H150CT Dataheets PDF



Part Number MBR30H150CT
Manufacturers Vishay
Logo Vishay
Description Dual Common Cathode High Voltage Schottky Rectifier
Datasheet MBR30H150CT DatasheetMBR30H150CT Datasheet (PDF)

MBR30H150CT, MBRF30H150CT, SB30H150CT-1 www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier Low Leakage Current 5.0 μA TO-220AB ITO-220AB 123 MBR30H150CT TO-262AA 123 MBRF30H150CT 123 SB30H150CT-1 PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 15 A 150 V 260 A VF 0.75 V TJ Package 175 °C TO-220AB, ITO-220AB, TO-262AA Diode variations Dual Common Cathode FEATURES • Power pack • Guardring for overvoltage protectio.

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MBR30H150CT, MBRF30H150CT, SB30H150CT-1 www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier Low Leakage Current 5.0 μA TO-220AB ITO-220AB 123 MBR30H150CT TO-262AA 123 MBRF30H150CT 123 SB30H150CT-1 PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 15 A 150 V 260 A VF 0.75 V TJ Package 175 °C TO-220AB, ITO-220AB, TO-262AA Diode variations Dual Common Cathode FEATURES • Power pack • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, and polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR30H150CT Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current total device per diode VRRM VRWM VDC IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz Peak non-repetitive reverse surge energy per diode (8/20 μs waveform) IRRM ERSM Non-repetitve avalanche energy per diode at 25 °C, IAS = 2 A, L = 10 mH Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min EAS dV/dt TJ, TSTG VAC MBRF30H150CT 150 150 150 30 15 260 1.0 10 20 10 000 - 65 to + 175 1500 SB30H150CT-1 UNIT V V V A A A mJ mJ V/μs °C V Revision: 13-Aug-13 1 Document Number: 88865 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR30H150CT, MBRF30H150CT, SB30H150CT-1 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Maximum instantaneous forward voltage  per diode Maximum reverse current per diode at working peak reverse voltage VF (1) IR (1) IF = 15 A IF = 15 A IF = 30 A IF = 30 A TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TJ = 25 °C TJ = 125 °C Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR MBRF Typical thermal resistance per diode RJC 1.7 4.0 VALUE 0.90 0.75 0.99 0.86 5.0 1.0 MBRB 1.7 UNIT V μA mA UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) TO-220AB MBR30H150CT-E3/45 2.06 ITO-220AB MBRF30H150CT-E3/45 2.20 TO-262AA SB30H150CT-1E3/45 1.58  RATINGS AND CHARACTERISTICS CURVES  (TA = 25 °C unless otherwise noted) PACKAGE CODE 45 45 45 BASE QUANTITY 50/tube 50/tube 50/tube DELIVERY MODE Tube Tube Tube Average Forward Current (A) Peak Forward Surge Current (A) 40 35 MBR, MBRB 30 MBRF 25 20 15 10 5 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve (Total) 280 TJ = TJ Max. 240 8.3 ms Single Half Sine-Wave 200 160 120 80 40 0 1 10 100 Number of Cycles at 60 Hz Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 13-Aug-13 2 Document Number: 88865 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR30H150CT, MBRF30H150CT, SB30H150CT-1 www.vishay.com Vishay General Semiconductor Instantaneous Forward Current (A) 100 TJ = 175 °C 10 TJ = 125 °C 1 TJ = 75 °C TJ = 25 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Instantaneous Reverse Current (µA) 10 000 1000 100 TJ = 175 °C TJ = 125 °C 10 TJ = 75 °C 1 0.1 TJ = 25 °C 0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode 10 000 Junction Capacitance (pF) 1000 100 10 0.1 1 10 Reverse Voltage (V) 100 Fig. 5 - Typical Junction Capacitance Per Diode 100 Transient Thermal Impedance (°C/W) 10 MBRF 1 MBR, MBRB 0.1 0.01 0.1 1 10 t - Pulse Duration (s) 100 Fig. 6 - Typical Transie.


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