MBR30H150CT, MBRF30H150CT, SB30H150CT-1
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
TO-220AB
ITO-220AB
123
MBR30H150CT
TO-262AA
123
MBRF30H150CT
123
SB30H150CT-1
PIN 1 PIN 3
PIN 2 CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
2 x 15 A 150 V 260 A
VF 0.75 V
TJ Package
175 °C
TO-220AB, ITO-220AB, TO-262AA
Diode variations
Dual Common Cathode
FEATURES • Power pack • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, and polarity protection application.
MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H150CT
Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage
Maximum average forward rectified current
total device per diode
VRRM VRWM VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 μs waveform)
IRRM ERSM
Non-repetitve avalanche energy per diode at 25 °C, IAS = 2 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
EAS dV/dt TJ, TSTG VAC
MBRF30H150CT 150 150 150 30 15
260
1.0
10
20
10 000 - 65 to + 175
1500
SB30H150CT-1
UNIT V V V
A
A A mJ
mJ V/μs °C
V
Revision: 13-Aug-13
1 Document Number: 88865
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR30H150CT, MBRF30H150CT, SB30H150CT-1
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum instantaneous forward voltage per diode
Maximum reverse current per diode at working peak reverse voltage
VF (1) IR (1)
IF = 15 A IF = 15 A IF = 30 A IF = 30 A
TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TJ = 25 °C TJ = 125 °C
Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
Typical thermal resistance per diode
RJC
1.7
4.0
VALUE 0.90 0.75 0.99 0.86 5.0 1.0
MBRB 1.7
UNIT V μA mA
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB MBR30H150CT-E3/45
2.06
ITO-220AB MBRF30H150CT-E3/45
2.20
TO-262AA SB30H150CT-1E3/45
1.58
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
PACKAGE CODE 45 45 45
BASE QUANTITY 50/tube 50/tube 50/tube
DELIVERY MODE Tube Tube Tube
Average Forward Current (A) Peak Forward Surge Current (A)
40
35 MBR, MBRB
30 MBRF
25
20
15
10
5
0 25 50 75 100 125 150 175 Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve (Total)
280 TJ = TJ Max.
240 8.3 ms Single Half Sine-Wave
200
160
120
80
40
0 1 10 100 Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode
Revision: 13-Aug-13
2 Document Number: 88865
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR30H150CT, MBRF30H150CT, SB30H150CT-1
www.vishay.com
Vishay General Semiconductor
Instantaneous Forward Current (A)
100 TJ = 175 °C
10 TJ = 125 °C
1
TJ = 75 °C TJ = 25 °C
0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Instantaneous Reverse Current (µA)
10 000 1000 100
TJ = 175 °C TJ = 125 °C
10 TJ = 75 °C
1
0.1 TJ = 25 °C
0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
Junction Capacitance (pF)
1000
100
10 0.1
1 10 Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
Transient Thermal Impedance (°C/W)
10 MBRF
1 MBR, MBRB
0.1 0.01
0.1 1 10 t - Pulse Duration (s)
100
Fig. 6 - Typical Transie.