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BC857C

Taiwan Semiconductor

0.2 Watts PNP Transistor

BC856A/B, BC857A/B/C, BC858A/B/C 200mW, PNP Small Signal Transistor Small Signal Product Features ◇ Epitaxial planar di...


Taiwan Semiconductor

BC857C

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Description
BC856A/B, BC857A/B/C, BC858A/B/C 200mW, PNP Small Signal Transistor Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code SOT-23 Mechanical Data ◇ Case : SOT- 23 small outline plastic package ◇ Terminal : Matte tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed ◇ High temperature soldering guaranteed : 260°C/10s ◇ Weight : 0.008 grams (approximately) Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Parameter Symbol Power Dissipation PD BC856 Collector-Base Voltage BC857 VCBO BC858 BC856 Collector-Emitter Voltage BC857 VCEO BC858 Emitter-Base Voltage VEBO Collector Current IC Junction and Storage Temperature Range TJ , TSTG Notes : 1. Valid provided that electrodes are kept at ambient temperature Value 200 -80 -50 -30 -65 -45 -30 -5 -0.1 -55 to + 150 Units mW V V V A °C Version : F14 Small Signal Product Electrical Characteristics ( TA= 25oC unless otherwise noted ) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltag...




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