BC858

BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) 3 1 2 SOT-23 MARKING DIAGRAM 3 XX = Device Code (See 1 2 Table Below) Rating Collector-Emitter Voltage BC856 BC857 BC858,BC859 Collector-Base Voltage BC856 BC857 BC858,BC859 Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -65 -45 -30 -80 -50 -30 -5.0 -100 Unit V V V mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Symbol PD R θJA PD R θJA Max 225 1.8 556 300 2.4 417 Unit mW mW/ C C/W mW mW/ C C/W Junction and Storage, Temperature TJ,Tstg -55 to +150 C 1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collector-Emitter Breakdown Voltage (IC= -10mA) BC856 Series BC857 Series V(BR)CEO -65 -45 - -V - BC858, BC859 Series -30 - - Collector-Emitter Breakdown Voltage (IC=-10 µA ,VEB=0) BC856 Series BC857 Series V(BR)CES -80 -50 - -V - BC858, BC859 Series -30 - - Collector-Base Breakdown Voltage (IC=-10 µA) BC856 Series BC857 Series V(BR)CBO -80 -50 - -V - BC858, BC8...