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FGB20N60SF

Fairchild Semiconductor

20A Field Stop IGBT

FGB20N60SF — 600 V, 20 A Field Stop IGBT FGB20N60SF 600 V, 20 A Field Stop IGBT Features • High Current Capability • Lo...


Fairchild Semiconductor

FGB20N60SF

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Description
FGB20N60SF — 600 V, 20 A Field Stop IGBT FGB20N60SF 600 V, 20 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: VCE(sat) =2.2 V @ IC = 20 A High Input Impedance Fast Switching : EOFF = 8 uJ/A RoHS Compliant Applications Solar Inverter, UPS, Welder, PFC November 2013 General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. GCE D2-PAK COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (PCB Mount)(2) Notes: 2: Mounted on 1” square PCB(FR4 or G-10 material) C G E Ratings 600  20 40 20 60 208 83 -55 to +150 -55 to +150 300 Typ. - Max. 0.6 40 Unit V V A A A W W oC oC oC Unit oC/W oC/W ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev. C1 1 www.f...




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