LMBT3904LT1G
S-LMBT3904LT1G
General Purpose Transistors NPN Silicon
1. FEATURES
● We declare that the material of produ...
LMBT3904LT1G
S-LMBT3904LT1G
General Purpose
Transistors
NPN Silicon
1. FEATURES
● We declare that the material of product compliance with RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT3904LT1G
1AM
3000/Tape&Reel
LMBT3904LT3G
1AM
10000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol Limits Unit
Collector–Emitter Voltage
VCEO
40
V
Collector–Base Voltage
VCBO
60
V
Emitter–Base Voltage
VEBO
6
V
Collector Current — Continuous
IC
200
mA
4. THERMAL CHARACTERISTICS
Parameter Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in.
Symbol PD
RΘJA
Limits Unit
225 mW 1.8 mW/ºC 556 ºC/W
TJ,Tstg −55∼+150 ºC
SOT23(TO-236)
1 BASE
3 COLLECTOR 2 EMITTER
Leshan Radio Company, LTD.
Rev.B Mar 2016
1/5
LMBT3904LT1G, S-LMBT3904LT1G
General Purpose
Transistors
NPN Silicon
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Characteristic
Symbol
Min.
Typ.
Max.
Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0)
VBR(CEO)
40
-
-
Collector–Base Breakdown Voltage (IC = 10 μA, IE = 0)
VBR(CBO)
60
-
-
Emitter–Base Breakdown Voltage (IE = 10 μA, IC = 0)
VBR(EBO)
6
-
-
Collector Cutoff Current (...
