SVF740T

SVF740T/F_Datasheet 10A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF740T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 10A,400V,RDS(on)(typ)=0.45 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING INFORMATION Part No. SVF740T SVF740F Package TO-220-3L TO-220F-3L Marking SVF740T SVF740F Material Pb free Pb free Packing Tube Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Rating SVF740T SVF740F 400 ±30 10 6.3 40 130 44 1.04 0.35 517 -55～+150 -55～+150 Unit V V A A W W/°C mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2012.09.26 Page 1 of 7 Silan Microelectronics SVF740T/F_Datasheet THERMAL CHARACTERISTICS Char...