2SK3870-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
TO-220AB
F...
2SK3870-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
TO-220AB
Features High speed switching No secondary breakdown Avalanche-proof
Low on-resistance Low driving power
Applications
Switching
regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item Drain-source voltage
Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation
Operating and Storage Temperature range
Symbol VDS VDSX ID ID(puls] VGS IAR EAS
EAR
dVDS/dt dV/dt PD
Tch Tstg
Ratings 230 230
40 ±160
±30 40
633.1
Unit V V A A V A mJ
Remarks VGS=-30V
Note *1 Note *2
27 mJ Note *3
20 5
270 2.02
+150
-55 to +150
kV/µs VDS=< 230V kV/µs Note *4
W Tc=25°C Ta=25°C
°C °C
Electrical characteristics (Tc =25°C unless otherwise specified)
Drain(D)
Gate(G) Source(S)
Note *1:Tch<= 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=16A,L=4.09mH,
VCC=48V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:IF<= -ID, -di/dt=50A/µs,VCC<= BVDSS,Tch<=...