FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
FDMS2506SDC
N-Channel Dual CoolTM PowerTrench® SyncFETTM
25 V,...
FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
FDMS2506SDC
N-Channel Dual CoolTM PowerTrench® SyncFETTM
25 V, 49 A, 1.45 mΩ
July 2013
Features
General Description
Dual CoolTM Top Side Cooling PQFN package
Max rDS(on) = 1.45 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 26 A High performance technology for extremely low rDS(on) SyncFET
Schottky Body Diode RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic
Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Pin 1
S SS G
D5 D6
4G 3S
D DD D
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
ID
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited)
-Continuous (Silicon limited) -Continuous -Pulsed
TC = 25 °C TC = 25 °C TA = 25 °C
EAS dv/dt
Single Pulse Avalanche Energy Peak Diode Recovery dv/dt
PD TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characte...