com Ordering number : ENN8332
2SK3615
2SK3615
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature
Symbol VDSS VGSS
ID IDP
PD
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Cutoff Vol...