CEP35P10/CEB35P10 CEF35P10
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
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CEB SERIES TO-263(DD-PAK)
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