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CEB6601 Dataheets PDF



Part Number CEB6601
Manufacturers CET
Logo CET
Description P-Channel MOSFET
Datasheet CEB6601 DatasheetCEB6601 Datasheet (PDF)

CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Vo.

  CEB6601   CEB6601


CEP6601 CEB6601 CEF6601


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