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CEH8205
N-Channel MOSFET
Description
CEH8205 N-Channel Enhancement Mode Field Effect
Transistor
FEATURES 20V, 5.2A , RDS(ON) TYP = 25 mΩ @VGS = 4.5V. RDS(ON) TYP = 30mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. Halogen free. 4 5 6 3 2 1 TSOP-6 G1(6) D1(2) G2(4) S1(1) D2(5) S2(3) ABSOLUTE MAXIMUM...
CET
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CEH8205
N-Channel MOSFET
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