CEM4207

CEM4207 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -7A, RDS(ON) = 30mΩ @VGS = -10V. RDS(ON) = 40mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -40 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -7 IDM -28 Maximum Power Dissipation PD 2 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units V V A A W C Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2011.Dec http://www.cet-mos.com CEM4207 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -6A VGS = -4.5V, ID ...