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CEM3083 Dataheets PDF



Part Number CEM3083
Manufacturers CET
Logo CET
Description P-Channel MOSFET
Datasheet CEM3083 DatasheetCEM3083 Datasheet (PDF)

CEM3083 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Curre.

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CEM3083 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -13 IDM -52 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A W C Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2007.Jun. http://www.cet-mos.com CEM3083 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d VGS(th) RDS(on) gFS Ciss Coss Crss VGS = VDS , ID = -250µA VGS = -10V, ID = -13A VGS = -4.5V, ID = -10A VDS = -15V, ID = -13A VDS = -15V, VGS = 0V, f = 1MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = -15V, ID = -13A, VGS = -10V, RGEN = 6Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = -15V, ID = -13A, VGS = -5V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c IS VSD VGS = 0V, IS = -1.3A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. Min -30 -1 Typ 8 12.5 40 3450 465 365 18.8 11.2 132 63 37.9 9.6 13.3 Max Units -1 100 -100 V µA nA nA -3 V 10 mΩ 15.5 mΩ S pF pF pF 37.6 ns 22.4 ns 264 ns 126 ns 50 nC nC nC -1.3 A -1.1 V 5 2 VTH, Normalized Gate-Source Threshold Voltage C, Capacitance (pF) -ID, Drain Current (A) 10 -VGS=10,8,6,4V 8 -VGS=2.4V 6 4 2 -VGS=2V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 6000 5000 4000 3000 Ciss 2000 1000 0 Crss 05 10 15 Coss 20 25 30 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 3 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) -IS, Source-drain current (A) -ID, Drain Current (A) CEM3083 20 16 12 8 25 C 4 TJ=125 C -55 C 0 01 2 3 4 5 6 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 2.2 ID=-13A 1.9 VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 102 VGS=0V 101 100 10-1 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current -VGS, Gate to Source Voltage (V) -ID, Drain Current (A) 5 VDS=-15V ID=-13A 4 3 2 1 0 0 8 16 24 32 40 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD VIN RL D VOUT VGS RGEN G S CEM3083 102 RDS(ON)Limit 101 100 10ms 100ms 1s DC 5 10-1 TA=25 C TJ=150 C 10-2 Single 10-2 Pulse 10-1 100 101 102 -VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area td(on) VOUT t on tr td(off) 90% 10% INVERTED toff tf 90% 10% VIN 10% 50% 90% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 100 D=0.5 10-1 10-2 0.2 0.1 0.05 0.02 0.01 Single Pulse 10-3 10-4 10-3 10-2 10-1 100 Square Wave Pulse Duration (sec) PDM t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = P* R JA (t) 4. Duty Cycle, D=t1/t2 101 102 Figure 11. Normalized Thermal Transient Impedance Curve 4 .


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