Document
CEM3083
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -13 IDM -52
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A
W
C
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 50
Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2007.Jun. http://www.cet-mos.com
CEM3083
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d
VGS(th) RDS(on)
gFS Ciss Coss Crss
VGS = VDS , ID = -250µA VGS = -10V, ID = -13A VGS = -4.5V, ID = -10A
VDS = -15V, ID = -13A
VDS = -15V, VGS = 0V, f = 1MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = -15V, ID = -13A, VGS = -10V, RGEN = 6Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = -15V, ID = -13A, VGS = -5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c
IS VSD
VGS = 0V, IS = -1.3A
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
Min -30
-1
Typ
8 12.5
40 3450 465 365
18.8 11.2 132 63 37.9 9.6 13.3
Max Units
-1 100 -100
V µA nA nA
-3 V 10 mΩ 15.5 mΩ
S pF pF pF
37.6 ns 22.4 ns 264 ns 126 ns 50 nC
nC nC
-1.3 A -1.1 V
5
2
VTH, Normalized Gate-Source Threshold Voltage
C, Capacitance (pF)
-ID, Drain Current (A)
10
-VGS=10,8,6,4V 8
-VGS=2.4V
6
4
2 -VGS=2V
0 0 0.1 0.2 0.3 0.4 0.5 0.6
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
6000
5000
4000 3000
Ciss
2000
1000
0 Crss 05
10 15
Coss 20 25 30
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation with Temperature
3
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
-IS, Source-drain current (A)
-ID, Drain Current (A)
CEM3083
20
16
12
8 25 C
4 TJ=125 C
-55 C
0 01 2 3 4 5 6
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=-13A 1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4 -100 -50 0 50 100 150 200
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation
with Temperature
102 VGS=0V
101
100
10-1 0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage
Variation with Source Current
-VGS, Gate to Source Voltage (V) -ID, Drain Current (A)
5 VDS=-15V ID=-13A
4
3
2
1
0 0 8 16 24 32 40
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDD
VIN RL D VOUT
VGS RGEN G
S
CEM3083
102 RDS(ON)Limit
101
100
10ms 100ms 1s DC
5
10-1
TA=25 C
TJ=150 C
10-2
Single 10-2
Pulse 10-1
100
101
102
-VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe Operating Area
td(on) VOUT
t on tr
td(off)
90%
10% INVERTED
toff tf
90%
10%
VIN
10%
50%
90% 50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
100 D=0.5
10-1 10-2
0.2 0.1
0.05
0.02 0.01
Single Pulse
10-3 10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (sec)
PDM
t1 t2
1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = P* R JA (t) 4. Duty Cycle, D=t1/t2
101
102
Figure 11. Normalized Thermal Transient Impedance Curve
4
.