CEF05N6
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 5A, RDS(ON) = 2.4Ω @VGS = 10V. ...
CEF05N6
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
650V, 5A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220F full-pak for through hole.
D
G
D S CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
650
±30
5 20 35 0.28
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 3.6 65
Units V V A A W
W/ C C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 3. 2009.Jun. http://www.cet-mos.com
CEF05N6
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c
Symbol
Test Condition
Min Typ Max Units
BVDSS IDSS IGSSF IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0...