CEG2288
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6.2A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON...
CEG2288
Dual N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
20V, 6.2A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.
G2 S2 S2 D
TSSOP-8
G1 S1 S1 D
D1 S1 2 S1 3 G1 4
8D 7 S2 6 S2 5 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 20
VGS ±12
ID 6.2 IDM 25
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 100
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 1. 2006.June http://www.cet-mos.com
CEG2288
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V
20
1 100 -100
V µA nA nA
Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchin...