SSM2212

Data Sheet FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% Low offset voltage (VOS): 200 μV maximum (SOIC) Outstanding offset voltage drift: 0.03 μV/°C High gain bandwidth product: 200 MHz Audio, Dual-Matched NPN Transistor SSM2212 PIN CONNECTIONS C1 1 B1 2 E1 3 NIC 4 SSM2212 8 C2 7 B2 6 E2 5 NIC NOTES 1. NIC = NO INTERNAL CONNECTION. Figure 1. 8-Lead SOIC_N 16 NIC 15 B1 14 NIC 13 C1 09043-001 GENERAL DESCRIPTION The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10 μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce highorder amplifier harmonic distortion. E1A 1 E1B 2 E2B 3 E2A 4 SSM2212 12 NIC 11 C2 10 NIC 9 NIC NIC 5 B2 6 NIC 7 NIC 8 09043-020 NOTES 1. NIC = NO INTERNAL CONNECTION. Figure 2. 16-Lead LFCSP_WQ Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching character...