SQD45P03-12

www.vishay.com SQD45P03-12 Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration TO-252 - 30 0.010 0.024 - 50 Single S FEATURES TrenchFET® Power MOSFET Package with Low Thermal Resistance AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 G GDS Top View Drain Connected to Tab D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-252 SQD45P03-12-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current TC = 25 °Ca TC = 125 °C VGS ID Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 30 ± 20 - 50 - 37 - 50 - 200 - 31 48 71 23 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJC LIMIT 50 2.1 UNIT V A mJ W °C UNIT °C/W S12-2095-Rev. C, 03-Sep-12 1 Document Number: 6...