Document
2SK2607
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2607
Chopper Regulator, DC−DC Converter and Moter Drive Applications
Unit: mm
z Low drain−source ON-resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs|= 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
800 800 ±30
9 27 150
778
9 15 150 −55 to 150
V V V
A
W mJ A mJ °C °C
1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
0.833 50
°C / W °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 17.4 mH, RG = 25 Ω, IAR = 9 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Start of commercial production
1995-12 1 2013-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
IGSS V (BR) GSS
IDSS V (BR) DSS
Vth RDS (ON)
|Yfs| Ciss Crss Coss
VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 640 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A, VDS = 15 V, ID = 4 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK2607
Min Typ. Max Unit
— — ±10
±30 —
—
— — 100
800 —
—
2.0 — 4.0
— 1.0 1.2
3.0 7.0
—
— 2160 —
— 45 —
— 200 —
μA V μA V V Ω S
pF
— 25 —
Switching time
Turn−on time Fall time
ton tf
— 60 — ns
— 25 —
Turn−off time
Total gate charge (gat.