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CEP07N7 Dataheets PDF



Part Number CEP07N7
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEP07N7 DatasheetCEP07N7 Datasheet (PDF)

CEP07N7/CEB07N7 CEF07N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP07N7 CEB07N7 CEF07N7 VDSS 700V 700V 700V RDS(ON) 1.5Ω 1.5Ω 1.5Ω ID 6.6A 6.6A 6.6A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Sy.

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CEP07N7/CEB07N7 CEF07N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP07N7 CEB07N7 CEF07N7 VDSS 700V 700V 700V RDS(ON) 1.5Ω 1.5Ω 1.5Ω ID 6.6A 6.6A 6.6A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 700 ±30 6.6 26.4 166 1.3 6.6d 26.4d 50 0.4 Repetitive Avalanche Energy EAR 3.6 Single Pulsed Avalanche Energy h Operating and Store Temperature Range EAS TJ,Tstg 38.88 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.75 62.5 2.5 65 Units V V A A W W/ C mJ mJ C Units C/W C/W Details are subject to change without notice . 1 Rev 4. 2012.Nov http://www.cet-mos.com CEP07N7/CEB07N7 CEF07N7 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS =700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 3.5A Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 300V, ID =6.6A, VGS = 10V, RGEN = 25Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 480V,ID = 6.6A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b ISf VSDg Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 3.2A . g.Full package VSD test condition IS = 3.2A . H.L = 6mH, IAS =3.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C. VGS = 0V, IS = 5A Min 700 2 Typ 1.3 1215 125 15 27 22 68 18 23 7 6 Max Units 1 100 -100 V µA nA nA 4V 1.5 Ω pF pF pF ns ns ns ns nC nC nC 6.6 A 1.4 V 2 ID, Drain Current (A) C, Capacitance (pF) CEP07N7/CEB07N7 CEF07N7 7.2 VGS=10,9,8,7,6V 6.0 4.8 10 25 C 7.5 ID, Drain Current (A) 3.6 VGS=5V 2.4 1.2 0 0 2 4 6 8 10 12 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 5 2.5 TJ=125 C -55 C 0 0 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 1800 1500 1200 Ciss 900 600 300 Coss 0 Crss 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) IS, Source-drain current (A) 3.4 ID=3.5A 2.9 VGS=10V 2.4 1.9 1.4 0.9 0.4 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 101 VGS=0V 100 10-1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current VTH, Normalized Gate-Source Threshold Voltage 3 VGS, Gate to Source Voltage (V) ID, Drain Current (A) CEP07N7/CEB07N7 CEF07N7 10 VDS=480V ID=6.6A 8 6 4 2 0 0 6 12 18 24 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD VIN RL D VOUT VGS RGEN G S 102 RDS(ON)Limit 101 100ms 1ms 10ms DC 100 TC=25 C TJ=150 C 10-1 Single Pulse 100 101 102 103 VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area td(on) VOUT t on tr td(off) 90% 10% INVERTED toff tf 90% 10% VIN 10% 50% 90% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 100 D=0.5 10-1 0.2 0.1 0.05 0.02 0.01 Single Pulse 10-2 10-2 10-1 100 101 102 Square Wave Pulse Duration (msec) PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 103 104 Figure 11. Normalized Thermal Transient Impedance Curve 4 .


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