Document
CEP07N7/CEB07N7 CEF07N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP07N7 CEB07N7 CEF07N7
VDSS 700V 700V
700V
RDS(ON) 1.5Ω 1.5Ω
1.5Ω
ID 6.6A 6.6A 6.6A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
700
±30
6.6 26.4 166 1.3
6.6d 26.4d 50 0.4
Repetitive Avalanche Energy
EAR 3.6
Single Pulsed Avalanche Energy h Operating and Store Temperature Range
EAS TJ,Tstg
38.88 -55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.75 62.5
2.5 65
Units
V V A A W W/ C mJ mJ C
Units C/W C/W
Details are subject to change without notice .
1
Rev 4. 2012.Nov http://www.cet-mos.com
CEP07N7/CEB07N7 CEF07N7
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS =700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 3.5A
Dynamic Characteristics c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss Crss
VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 300V, ID =6.6A, VGS = 10V, RGEN = 25Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 480V,ID = 6.6A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
ISf VSDg
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 3.2A . g.Full package VSD test condition IS = 3.2A . H.L = 6mH, IAS =3.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C.
VGS = 0V, IS = 5A
Min 700
2
Typ
1.3
1215 125 15 27 22 68 18 23
7 6
Max Units
1 100 -100
V µA nA nA
4V 1.5 Ω
pF pF pF
ns ns ns ns nC nC nC
6.6 A 1.4 V
2
ID, Drain Current (A)
C, Capacitance (pF)
CEP07N7/CEB07N7 CEF07N7
7.2 VGS=10,9,8,7,6V
6.0
4.8
10 25 C
7.5
ID, Drain Current (A)
3.6 VGS=5V
2.4
1.2
0 0 2 4 6 8 10 12
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
5
2.5 TJ=125 C -55 C
0 0 2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1800
1500 1200
Ciss
900
600
300 Coss 0 Crss 0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation with Temperature
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
IS, Source-drain current (A)
3.4 ID=3.5A 2.9 VGS=10V
2.4
1.9
1.4
0.9
0.4 -100 -50 0 50 100 150 200
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation
with Temperature
101 VGS=0V
100
10-1 0.4
0.6
0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage Variation with Source Current
VTH, Normalized Gate-Source Threshold Voltage
3
VGS, Gate to Source Voltage (V) ID, Drain Current (A)
CEP07N7/CEB07N7 CEF07N7
10 VDS=480V ID=6.6A
8
6
4
2
0 0 6 12 18 24
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDD
VIN RL D VOUT
VGS RGEN G
S
102 RDS(ON)Limit
101
100ms 1ms
10ms
DC 100
TC=25 C TJ=150 C 10-1 Single Pulse 100 101 102 103
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe Operating Area
td(on) VOUT
t on tr
td(off)
90%
10% INVERTED
toff tf
90%
10%
VIN
10%
50%
90% 50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
100 D=0.5
10-1
0.2
0.1
0.05 0.02 0.01 Single Pulse
10-2 10-2
10-1
100 101 102
Square Wave Pulse Duration (msec)
PDM
t1 t2
1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2
103
104
Figure 11. Normalized Thermal Transient Impedance Curve
4
.