CEB05N65

CEP05N65/CEB05N65 CEF05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP05N65 CEB05N65 CEF05N65 VDSS 650V 650V 650V RDS(ON) 2.4Ω 2.4Ω 2.4Ω ID 4.5A 4.5A 4.5A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 650 VGS ±30 ID 4.5 2.9 IDM 18 84 PD 0.67 TO-220F 4.5 d 2.9 d 18 d 40 0.32 Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range EAS IAS TJ,Tstg 43 3.5 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.5 62.5 3.8 65 Units V V A A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice . 1 Rev 4. 2011.Nov http://www.cet-mos.com CEP05N65/CEB05N65 CEF05N65 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Ch...