K3418

2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 4.3 mΩ typ. Capable of 4 V gate drive High speed switching Outline TO-220AB D G S1 2 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 EARNote3 PchNote2 Tch Tstg REJ03G0407-0200 (Previous ADE-208-941 (Z)) Rev.2.00 Sep.10.2004 1. Gate 2. Drain (Flange) 3. Source Ratings 60 ±20 85 340 85 60 308 110 150 – 55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Rev.2.00 Sep. 10, 2004 page 1 of 7 2SK3418 Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 1. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 60 — — 1.0 55 — — — — — ...