Si4952DY

Dual N-Channel 25-V (D-S) MOSFET Si4952DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.023 at VGS = 10 V 25 0.028 at VGS = 4.5 V ID (A)a 8 8 Qg (Typ.) 5.5 nC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter Gaming Notebook System Power D1 D2 G1 G2 Ordering Information: Si4952DY-T1-E3 (Lead (Pb)-free) Si4952DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 25 ± 16 8a 7 7b, c 5.6b, c 30 2.3 1.5b, c 5 1.25 2.8 1.8 1.8b, c 1.1b, c - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W. Symbol RthJA ...