AOTF4185

AOTF4185 40V P-Channel MOSFET General Description Product Summary The AOTF4185 combines advanced trench MOSFET 40V technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) 100% UIS Tested 100% Rg Tested -40V -34A < 16mΩ < 20mΩ Top View TO220F Bottom View D G DS S DG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum -40 ±20 -34 -27 -100 -42 88 33 16 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient AD Maximum Junction-to-Case t ≤ 10s Steady-State Symbol RθJA RθJC Typ 10 3 Max 13 4.5 Units V V A A mJ W °C Units °C/W °C/W Rev.2.0: May 2013 www.aosmd.com Page 1 of 6 AOTF4185 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-40V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS...