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TC58NVG2S3ETAI0 Dataheets PDF



Part Number TC58NVG2S3ETAI0
Manufacturers Toshiba
Logo Toshiba
Description 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
Datasheet TC58NVG2S3ETAI0 DatasheetTC58NVG2S3ETAI0 Datasheet (PDF)

TC58NVG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase ope.

  TC58NVG2S3ETAI0   TC58NVG2S3ETAI0


D1115 TC58NVG2S3ETAI0 AOTF4185


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