D1115

2SD1115(K) Silicon NPN Triple Diffused www.DataSheet4U.com Application High voltage switching, igniter Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter 2 1 4.5 kΩ (Typ) 250 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) PC*1 Tj Tstg Ratings 400 300 7 3 6 40 150 –55 to +150 Unit V V V A A W °C °C 2SD1115(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to base breakdown V(BR)CBO voltage 400 Collector to emitter sustain voltage VCEO(sus) 300 Emitter to base breakdown voltage V(BR)EBO 7 www.DataSheet4U.com Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage ICEO hFE VCE(sat) — 500 — Base to emitter saturation voltage VBE(sat) — Turn on time Turn off time Note: 1. Pulse test. ton — toff — Typ — — — — — — — 1.0 22 Max — — — 100 — 1.5 2.0 — — Unit V Test conditions IC = 0.1 mA, IE = 0 V IC = 2 A, PW = 50 µs, f = 50 Hz, L = 10 mH V IE = 50 mA, IC = 0 µA VCE = 300 V, RBE = ∞ VCE = 2 V, IC = 2 A*1 V IC = 2 A, IB = 20 mA*1 V µs IC = 2 A, IB1 = –IB2 = 20 mA µs Collector power dissipation Pc (W) Maximum Collector Dissipation Curve 60 40 20 Collector current IC (A) 0 50 100 150 Case temperature TC (°C) Area of Safe Operatio...