Freescale Semiconductor Technical Data
Document Number: MRF8P23160WH Rev. 0, 12/2011
RF Power Field Effect Transistors...
Freescale Semiconductor Technical Data
Document Number: MRF8P23160WH Rev. 0, 12/2011
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz.
CITDylQippAipci=anlg6D,0oC0hhmearAntyn, eVSlGinBSgaBlne=d--wC1i.ad2rtrhVied=rcW3, .P8--oC4uDMt =MH3Az0,PIWneprafutottsrmSAiagvnngca.,el I:PQVADRMDa==g9n2.i9t8uddVBeolt@s, 0.01% Probability on CCDF.
Frequency 2300 MHz 2350 MHz 2400 MHz
Gps (dB) 13.9 14.1 13.8
ηD Output PAR ACPR
(%)
(dB)
(dBc)
37.1 7.9 --31.0
38.3 7.7 --32.2
38.3 7.4 --33.1
MRF8P23160WHR3 MRF8P23160WHSR3
2300--2400 MHz, 30 W AVG., 28 V SINGLE W--CDMA
LATERAL N--CHANNEL RF POWER MOSFETs
Capable of Handling 10:1 VSWR, @ 30 Vdc, 2350 MHz, 144 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point ≃ 190 Watts (2) Features
Designed for Wide Instantaneous Bandwidth Applications Designed for Wideband Applications that Require 100 MHz Signal Bandwidth Production Tested in a Symmetrical Doherty Configuration 100% PAR Tested for Guaranteed Output Power Capability Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems NI--7...
