MDP12N50B

MDP12N50B / MDF12N50B N-channel MOSFET 500V MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65Ω General Description The MDP/F12N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F12N50B is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP12N50B MDF12N50B 500 ±30 11.5 11.5* 7.0 7.0* 46 46* 165 42 1.33 0.32 16.5 4.5 460 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) May 2012. Version 1.1 Symbol RθJA RθJC MDP12N50B 62.5 0.75 MDF12N50B 62.5 3.0 Unit oC/W 1 MagnaChip Semiconductor Ltd. MDP12N50B / MDF12N50B N-channel MOSFET 500V Ordering Information Part Number MDP12N50BTH MDF12N50BTH Temp. Range -55~150oC -55~150oC Package TO-220 TO-220F Packing Tube Tube RoHS Status Halogen...