CEP84A4

CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 40 VGS ±20 Drain Current-Continuous@ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C ID IDM PD 90 62 360 71 0.47 Operating and Store Temperature Range TJ,Tstg -55 to 175 Units V V A A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.1 62.5 Units C/W C/W Details are subject to change without notice . 1 Rev 1. 2010.Oct. http://www.cet-mos.com CEP84A4/CEB84A4 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Symbol Test Condition Min Typ Max Units BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V...