CEP3100
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 47A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 package.
G D S
CEP SERIES TO-220
D
G S
ABSOLUTE MAXIMUM RATINGS Tc = ...
