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CEF840L Dataheets PDF



Part Number CEF840L
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEF840L DatasheetCEF840L Datasheet (PDF)

CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840L CEB840L VDSS 500V 500V CEF840L 500V RDS(ON) 0.8Ω 0.8Ω 0.8Ω ID @VGS 8A 10V 8A 10V 8A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Paramet.

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CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840L CEB840L VDSS 500V 500V CEF840L 500V RDS(ON) 0.8Ω 0.8Ω 0.8Ω ID @VGS 8A 10V 8A 10V 8A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 500 VGS ±20 ID 8 8 e IDM f 32 32 e 125 40 PD 1.0 0.32 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.0 62.5 3.1 65 Units V V A A W W/ C C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2007.Nov. http://www.cet-mos.com CEP840L/CEB840L CEF840L Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 500V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 4.8A Forward Transconductance Dynamic Characteristics c gFS VDS = 50V, ID = 4.8A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 250V, ID = 8A, VGS = 10V, RGEN = 9.1Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 400V, ID = 8A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b IS f VSD VGS = 0V, IS = 8A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 4.6A . Min 500 1 Typ 0.6 7 1240 145 20 20 9 48 8 33 6.2 13.9 Max Units 25 100 -100 V µA nA nA 3V 0.8 Ω S pF pF pF 40 ns 18 ns 92 ns 16 ns 43.8 nC nC nC 8A 1.5 V 2 ID, Drain Current (A) C, Capacitance (pF) 12 VGS=10,9,8,7V 10 8 VGS=6V 6 4 VGS=5V 2 0 0 2 4 6 8 10 12 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics CEP840L/CEB840L CEF840L ID, Drain Current (A) 18 15 12 9 6 25 C 3 TJ=125C -55 C 0 123456 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 1800 1500 1200 Ciss 900 600 300 Coss 0 Crss 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) IS, Source-drain current (A) 2.2 ID=4.8A 1.9 VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 100 VGS=0V 10-1 10-2 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current VTH, Normalized Gate-Source Threshold Voltage 3 VGS, Gate to Source Voltage (V) ID, Drain Current (A) 10 VDS=400V ID=8A 8 6 4 2 0 0 10 20 30 40 50 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD VIN RL D VOUT VGS RGEN G S CEP840L/CEB840L CEF840L RDS(ON)Limit 100ms 101 1ms 10ms DC 100 TC=25 C TJ=150 C Single Pulse 10-1 100 101 102 103 VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area td(on) VOUT t on tr td(off) 90% 10% INVERTED toff tf 90% 10% VIN 10% 50% 90% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 100 D=0.5 10-1 10-2 0.2 0.1 0.05 0.02 0.01 Single Pulse 10-3 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 100 101 Figure 11. Normalized Thermal Transient Impedance Curve 4 .


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