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CEF540L Dataheets PDF



Part Number CEF540L
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEF540L DatasheetCEF540L Datasheet (PDF)

CEP540L/CEB540L CEF540L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 50mΩ @VGS = 10V. RDS(ON) = 53mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Volt.

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CEP540L/CEB540L CEF540L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 50mΩ @VGS = 10V. RDS(ON) = 53mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 100 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 36 IDM 120 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 140 0.91 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS 310 IAS 18 Operating and Store Temperature Range TJ,Tstg -55 to 175 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.1 62.5 Units C/W C/W . Details are subject to change without notice . 1 Rev .1 2010.April. http://www.cet-mos.com CEP540L/CEB540L CEF540L Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c VGS(th) RDS(on) gFS Ciss Coss Crss VGS = VDS, ID = 250µA VGS = 10V, ID = 18A VGS = 5V, ID = 15A VDS = 25V, ID = 18A VDS = 25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 50V, ID = 18A, VGS = 10V, RGEN = 5.1Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 80V, ID = 18A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b IS VSD VGS = 0V, IS = 18A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 1mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C Min 100 1 Typ Max Units 25 100 -100 V µA nA nA 3V 40 50 mΩ 43 53 mΩ 14 S 1295 199 40 pF pF pF 13 26 ns 3.1 7 ns 55 110 ns 5 10 ns 40 80 nC 3.7 nC 10 nC 36 A 1.3 V 2 ID, Drain Current (A) C, Capacitance (pF) 40 VGS=10,8,6,5V 30 20 VGS=4.0V CEP540L/CEB540L CEF540L 40 25 C 30 20 ID, Drain Current (A) 10 0 012345 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 2400 2000 1600 Ciss 1200 800 400 Coss 0 Crss 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) IS, Source-drain current (A) 10 TJ=125 C -55 C 0 0.0 1.0 2.0 3.0 4.0 5.0 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 3.0 ID=18A 2.5 VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 102 101 100 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current VTH, Normalized Gate-Source Threshold Voltage 3 VGS, Gate to Source Voltage (V) ID, Drain Current (A) CEP540L/CEB540L CEF540L 10 VDS=80V ID=18A 8 6 4 2 0 0 10 20 30 40 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD VIN RL D VOUT VGS RGEN G S 103 RDS(ON)Limit 102 10µs 100µs 101 1ms 100 TC=25 C TJ=175 C 10-1 Single Pulse 100 101 10ms 102 103 VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area td(on) VOUT t on tr td(off) 90% 10% INVERTED toff tf 90% 10% VIN 10% 50% 90% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 100 D=0.5 10-1 0.2 0.1 0.05 0.02 0.01 Single Pulse 10-2 10-2 10-1 100 101 102 Square Wave Pulse Duration (msec) PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 103 104 Figure 11. Normalized Thermal Transient Impedance Curve 4 .


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