Document
CEP540L/CEB540L CEF540L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 36A, RDS(ON) = 50mΩ @VGS = 10V. RDS(ON) = 53mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 100
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 36 IDM 120
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
140 0.91
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
EAS 310 IAS 18
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units V V A A W
W/ C mJ A C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.1 62.5
Units C/W C/W
. Details are subject to change without notice .
1
Rev .1 2010.April. http://www.cet-mos.com
CEP540L/CEB540L
CEF540L
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
VGS(th) RDS(on)
gFS
Ciss Coss Crss
VGS = VDS, ID = 250µA VGS = 10V, ID = 18A VGS = 5V, ID = 15A VDS = 25V, ID = 18A
VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 50V, ID = 18A, VGS = 10V, RGEN = 5.1Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 80V, ID = 18A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
IS VSD
VGS = 0V, IS = 18A
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 1mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
Min 100
1
Typ Max Units
25 100 -100
V µA nA nA
3V
40 50 mΩ 43 53 mΩ 14 S
1295 199 40
pF pF pF
13 26 ns 3.1 7 ns 55 110 ns 5 10 ns 40 80 nC 3.7 nC 10 nC
36 A 1.3 V
2
ID, Drain Current (A)
C, Capacitance (pF)
40 VGS=10,8,6,5V
30
20
VGS=4.0V
CEP540L/CEB540L CEF540L
40 25 C
30
20
ID, Drain Current (A)
10
0 012345
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2400
2000 1600
Ciss
1200
800
400 Coss 0 Crss 0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation with Temperature
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
IS, Source-drain current (A)
10 TJ=125 C
-55 C
0 0.0 1.0 2.0 3.0 4.0 5.0
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0 ID=18A 2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0 -100 -50 0 50 100 150 200
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage Variation with Source Current
VTH, Normalized Gate-Source Threshold Voltage
3
VGS, Gate to Source Voltage (V) ID, Drain Current (A)
CEP540L/CEB540L CEF540L
10 VDS=80V ID=18A
8
6
4
2
0 0 10 20 30 40
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDD
VIN RL D VOUT
VGS RGEN G
S
103 RDS(ON)Limit
102 10µs
100µs 101
1ms
100 TC=25 C TJ=175 C
10-1 Single Pulse 100 101
10ms 102 103
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe Operating Area
td(on) VOUT
t on tr
td(off)
90%
10% INVERTED
toff tf
90%
10%
VIN
10%
50%
90% 50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
100 D=0.5
10-1
0.2
0.1
0.05 0.02 0.01 Single Pulse
10-2 10-2
10-1
100 101 102
Square Wave Pulse Duration (msec)
PDM
t1 t2
1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2
103
104
Figure 11. Normalized Thermal Transient Impedance Curve
4
.