CEP540L/CEB540L CEF540L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 36A, RDS(ON) = 50mΩ @VGS = 10...
CEP540L/CEB540L CEF540L
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
100V, 36A, RDS(ON) = 50mΩ @VGS = 10V. RDS(ON) = 53mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 100
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 36 IDM 120
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
140 0.91
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
EAS 310 IAS 18
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units V V A A W
W/ C mJ A C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.1 62.5
Units C/W C/W
. Details are subject to change without notice .
1
Rev .1 2010.April. http://www.cet-mos.com
CEP540L/CEB540L
CEF540L
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20...