CEB93A3

CEP93A3/CEB93A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 150A, RDS(ON) = 3.0 mΩ @VGS = 10V. RDS(ON) = 6.0 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 150 102 600 120 0.8 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS 648 IAS 36 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.25 62.5 Units V V A A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice . 1 Rev 4. 2011.Dec. http://www.cet-mos.com CEP93A3/CEB93A3 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Symbol Test Condition Min Typ Max Units Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS =...