FDB8160_F085

FDB8160_F085 N-Channel PowerTrench® MOSFET FDB8160_F085 N-Channel PowerTrench® MOSFET 30V, 80A, 1.8mΩ October 2010 Features „ Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 187nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ 12V Automotive Load Control „ Starter/Alternator Systems „ Electronic Power Steering Systems „ DC/DC converter TO-263AB FDB SERIES ©2010 Fairchild Semiconductor Corporation FDB8160_F085 Rev. C 1 www.fairchildsemi.com FDB8160_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 160oC, VGS = 10V) Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics (Note 1) RθJC RθJA Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area Ratings 30 ±20 80 See Figure 4 1290 254 1.7 -55 to +175 0.59 43 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking Device FDB8160 FDB8160_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Off Characteristics Test Conditions Min Typ Max Units ...