D1137

2SD1137 Silicon NPN Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860 Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC (peak) PC PC * 1 Tj Tstg 1. Base 2. Collector (Flange) 3. Emitter Rating 100 100 4 4 5 1.8 40 150 –45 to +150 Unit V V V A A W W °C °C 2SD1137 Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to emitter breakdown V(BR)CEO voltage 100 Emitter to base breakdown voltage V(BR)EBO 4 Collector cutoff current Emitter cutoff current DC current transfer ratio I CEO — I EBO — hFE 50 25 Collector to emitter saturation VCE (sat) voltage — Note: 1. Pulse test. Typ — — — — — — — Max Unit —V —V 100 µA 50 µA 250 350 1.0 V Test conditions IC = 10 mA, RBE = ∞ IE = 1 mA, IC = 0 VCE = 80 V, RBE = ∞ VEB = 3.5 V, IC = 0 VCE = 4 V IC = 0.5 A*1 IC = 50 mA IC = 1 A, IB = 0.1 A Collector power dissipation PC (W) Collector current IC (A) Maximum Collector Dissipation Curve 60 40 20 0 50 100 150 Case temperature TC (°C) Area of Safe Operation 10 (10 V, 4 A) 3 1.0 DC Operation TC = 25°C (40 V, 1 A) 0.3 0.1 (100 V, 50 mA) 0.03 0.01 1 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V) 2 Colle...