CED02N9/CEU02N9
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
900V, 2A, RDS(ON) = 6.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSO...
