FDS8958A_F085

FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET February 2010 FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET tm General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package Qualified to AEC Q101 RoHS Compliant DD1DD2DD2 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD EAS TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation (Note 1a) Power Dissipation for Single Operation (Note 1a) (Note 1c) Single Pulse Avalanche Energy (Note 3) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device ...