3V supply Flash memory
M29W400DT M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
Features
Supply voltage – ...
Description
M29W400DT M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
Features
Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read
Access time: 45, 55, 70 ns
Programming time – 10 μs per byte/word typical
11 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 8 main blocks
Program/Erase controller – Embedded byte/word program algorithms
Erase Suspend and Resume modes – Read and Program another block during Erase Suspend
Unlock bypass program command – Faster production/batch programming
Temporary block unprotection mode
Low power consumption – Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic signature – Manufacturer code: 0020h – Top device code M29W400DT: 00EEh – Bottom device code M29W400DB: 00EFh – RoHS packages
Automotive Device Grade 3 – Temperature: –40 to 125 °C – Automotive grade certified
SO44 (M)(1)
TSOP48 (N) 12 x 20 mm
FBGA
TFBGA48 (ZA)(1) 6 x 9 mm
FBGA
TFBGA48 (ZE) 6 x 8 mm
1. These packages are no more in mass production.
April 2009
Rev 8
1/48
www.numonyx.com
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Contents
Contents
M29W400DT, M29W400DB
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.1 Address inputs (A0-A17) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.2 Data inputs/outputs (D...
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