BAV70T

BAV70T, NSVBAV70T Dual Switching Diode Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient (Note 1) RqJA 555 °C/W Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C PD 360 mW 2.9 mW/°C Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 345 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad www.onsemi.com 3 CATHODE ANODE 1 2 ANODE 3 CASE 463 SOT−416/SC−75 2 1 STYLE 3 MARKING DIAGRAM A4 MG G 1 A4 = Specific Device Code M = Date Code G = Pb−Free Package ORDERING INFORMATION Device BAV70TT1G Package SOT−416 (Pb-Free) Shipping† 3000 / Tape & Reel NSVBAV70TT1G SOT−416 (Pb-Free) 3000 / Tape & Reel NSVBAV70TT3G SOT−416 10000 / Tap...