SPZT2222AT1G

PZT2222A, SPZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features PNP Complement is PZT2907AT1 The SOT−223 Package Can be Soldered Using Wave or Reflow SOT−223 Package Ensures Level Mounting, Resulting in Improved Thermal Conduction, and Allows Visual Inspection of Soldered Joints The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die Available in 12 mm Tape and Reel AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage (Open Collector) VCEO 40 Vdc VCBO 75 Vdc VEBO 6.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation up to TA = 25°C (Note 1) PD W 1.5 Storage Temperature Range° Tstg − 65 to +150 °C Junction Temperature° TJ 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mo...