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STTH1002C-Y

STMicroelectronics

Automotive high efficiency ultrafast diode

STTH1002C-Y Automotive high efficiency ultrafast diode Features ■ Suited for SMPS ■ Low losses ■ Low forward and revers...


STMicroelectronics

STTH1002C-Y

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STTH1002C-Y Automotive high efficiency ultrafast diode Features ■ Suited for SMPS ■ Low losses ■ Low forward and reverse recovery times ■ High junction temperature ■ Low leakage current ■ AEC-Q101 qualified Description Dual center tap rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in DPAK and D2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive applications. A1 A2 K K A2 A1 DPAK STTH1002CBY K K K A2 A1 D2PAK STTH1002CGY Table 1. Device summary Symbol Value IF(AV) VRRM Tj (max) VF(typ) trr (typ) Up to 2 x 8 A 200 V 175 °C 0.78 V 20 ns November 2011 Doc ID 17536 Rev 2 1/9 www.st.com 9 Characteristics 1 Characteristics STTH1002C-Y Table 2. Symbol Absolute ratings (limiting values, per diode) Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Avarage forward current δ = 0.5 IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Operating junction temperature range D2PAK DPAK Tc = 155 °C Per diode Tc = 150 °C Per device Tc = 135 °C Per diode Tc = 125 °C Per device tp = 10 ms sinusoidal Value 200 20 10 5 10 8 16 50 -65 to + 175 -40 to + 175 Unit V A A A °C °C Table 3. Symbol Thermal parameters Parameter Rth(j-c) Junction to case Rth(j-c) Coupling Per diode Per device When the diodes 1 and 2 are used simultaneously: Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2...




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