UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR
FEATURES
* High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially
suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE
1
TO-220
ABSOLUTE MAXIMUM RATINGS
(TC=25℃, unless otherwise noted. )
PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse)* Base Current (DC) Base Current (Pulse)* Power Dissipation (TC=25℃) Junction Temperature Storage Temperature
SYMBOL VCBO VCEO VEBO IC www. DataSheet...