STP9NM60

STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TARGET DATA TYPE VDSS RDS(on) ID Pw STP9NM60 STD9NM60 STD9NM60-1 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω 8.3 A 8.3 A 8.3 A 100 W 100 W 100 W s TYPICAL RDS(on) = 0.55 Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s IMPROVED ESD CAPABILITY s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS TO-220 IPAK 3 2 1 3 1 DPAK DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE STP9NM60 STD9NM60T4 STD9NM60-1 MARKING P9NM60 D9NM60 D9NM60 June 2003 PACKAGE TO-220 DPAK IPAK PACKAGING TUBE TAPE & REEL TUBE 1/9 STP9NM60 / STD9NM60 / STD9NM60-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate-source ...