Dual N-Channel Enhancement Mode Field Effect Transistor
Description
CEM6608
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4A, RDS(ON) = 76mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 D1 D2 D2 876 5
SO-8
1
123 4 S1 G1 S2 G2
ABSOLUTE MAXIMUM RAT...
